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參數(shù)資料
| 型號： | PT493FE0000F |
| 廠商： | SHARP ELECTRONICS CORP |
| 元件分類： | 光敏三極管 |
| 中文描述： | PHOTO DARLINGTON DETECTOR |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 786K |
| 代理商： | PT493FE0000F |
Sheet No.: D1-A02701EN
3
PT493FE0000F
■ Absolute Maximum Ratings
*1 3 s (MAX.) at 1.4 mm from resin edge.
■ Electro-optical Characteristics
*1 Ev and Ee: Irradiance by CIE standard light source A (tungsten lamp)
Parameter
Symbol
Rating
Unit
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
6V
Collector current
IC
50
mA
Collector power dissipation
PC
75
mW
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +85
°C
Soldering temperature *1
Tsol
260
°C
Parameter
Symbol
Conditions *1
MIN.
TYP.
MAX.
Unit
Collector current
IC
Ev = 2 lx, VCE = 2 V
0.2
–
0.8
mA
Dark current
ICEO
Ee = 0, VCE = 10 V
–
1.0
A
Collector-emitter saturation voltage
VCE(sat)
Ee = 1 mW/cm2, IC = 0.8 mA
–
1.0
V
Collector-emitter breakdown voltage
BVCEO
IC = 0.1 mA, Ee = 0
35
–
V
Emitter-collector breakdown voltage
BVECO
IE = 0.01 mA, Ee = 0
6
–
V
Peak sensitivity wavelength
λp
–
860
–
nm
Response time (Rise)
tr
VCE = 2 V, IC = 5 mA,
RL = 100 Ω
–
400
2000
s
Response time (Fall)
tf
–
300
1500
s
Half-intensity angle
θ
–
±40–degrees
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
75
70
60
50
40
30
20
15
10
-25
0
25
Ambient temperature Ta (°C)
Collector
po
w
er
dissipation
Pc
(m
W
)
50
75 85
100
0
Fig. 2 Spectral Sensitivity (TYP.)
0
20
40
60
80
100
Wavelength
λ (nm)
Re
la
ti
v
e
s
e
n
s
iti
v
it
y
(%
)
400
500
600
700
800
900
Ta = 25°C
1000
1100
(Ta = 25°C)
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