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| 型號： | PST7528 |
| 英文描述： | A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. P; Similar to IRF6691 shipped in tape and reel 1000 pieces |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 151K |
| 代理商： | PST7528 |
MITSUMI
Protection of Lithium-Ion Batteries (for Double-Protect) MM1451
Absolute Maximun Ratings
(Ta=25°C)
Electrical Characteristics 1
(Except where noted otherwise, Ta=25°C, V
CEL
=V3
-
V2=V2
-
V1=V1
-
GND, V
CC
=3 V
CEL
)
Electrical Characteristics 2
(Except where noted otherwise, Ta=25°C, V
CEL
=V3-V2=V2-V1=V1-GND, V
CC
=3 V
CEL
)
Item
Symbol
T
OPR
T
STG
V
CC
V1
V2
V3
V
CT
V
OUT
Pd
Ratings
-
20~+80
-
40~+125
Unit
°C
°C
Operating temparature
Storage temparature
V
CC
Input voltage
V1 Input voltage
*
1
V2 Input voltage
*
1
V3 Input voltage
*
1
Ct pin voltage
*
2
V
OUT
pin voltage
-
0.3~18
V
-
0.3~18
-
0.3~18
170
V
V
Allowable loss
mW
Note 1 :
*
1 18V >V3 >V2 >V1 >
-
0.3
Note 2 :
*
2 Do not impress current of 300μA or more on the Ct pin.
Item
Symbol
I
1
I
2
I
3
V
S
Hys
T
PLH
I
OH
Measurement conditions
V
CEL
=3.8V
V
CEL
=2.3V
V
CEL
=3.8V (between V3, V2, V1)
V
CEL
=L H Ta=
-
20~+70°C
V
CEL
=L H L
Ct=0.22μF
V
CEL
=V
CC
=4.5V V
O
=3V
Min. Typ. Max. Unit
3.0
0.3
±0.0
4.400 4.450 4.500
35
50
1.0
1.5
100
500
Current consumption 1
6.0
0.5
±0.3
μA
μA
μA
V
mV
s
μA
Current consumption 2
Pin I/O current between cells
Overcharge detection voltage
Hysterisis voltage
65
2.0
Overcharge detection delay time
Output current
Item
Symbol
I
1
I
2
I
3
V
S
Hys
T
PLH
I
OH
I
LEAK
Measurement conditions
V
CEL
=3.8V, V
CC
=V
CEL
V
CEL
=2.3V, V
CC
=V
CEL
V
CEL
V
CEL
=L H Ta=
-
20~+70°C
V
CEL
=L H L
Ct=0.22μF
V
CEL
=V
CC
=4.6V V
O
=3V
V
CEL
=3.8V, V
CC
=18V
Min. Typ. Max. Unit
3.0
0.3
±0.0
4.400 4.450 4.500
35
50
1.0
1.5
100
500
Current consumption 1
3
3
6.0
0.5
±0.3
μA
μA
μA
V
mV
s
μA
μA
Current consumption 2
Pin I/O current between cells
Overcharge detection voltage
Hysterisis voltage
65
2.0
Overcharge detection delay time
Output current
Output leakage current
0.1
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