參數(shù)資料
型號: PSD835G2
英文描述: Configurable Memory System on a Chip for 8-Bit Microcontrollers(8位微控制器片上存儲器可編程外設)
中文描述: 在8片位微控制器可配置存儲系統(tǒng)(8位微控制器片上存儲器可編程外設)
文件頁數(shù): 90/110頁
文件大?。?/td> 535K
代理商: PSD835G2
PSD8XX Family
PSD835G2 Beta Information
90
-90
-12
Turbo
Off
Symbol
Parameter
Conditions
Min
Max
Min
Max
Unit
t
LVLX
t
AVLX
t
LXAX
t
AVQV
t
SLQV
ALE or AS Pulse Width
22
24
ns
Address Setup Time
(Note 3)
7
9
ns
Address Hold Time
(Note 3)
8
10
ns
Address Valid to Data Valid
(Note 3)
90
120
Add 20**
ns
CS Valid to Data Valid
90
120
ns
RD to Data Valid
(Note 5)
35
35
ns
t
RLQV
RD or PSEN to Data Valid,
80C51XA Mode
(Note 2)
45
48
ns
t
RHQX
t
RLRH
t
RHQZ
t
EHEL
t
THEH
t
ELTL
RD Data Hold Time
(Note 1)
0
0
ns
RD Pulse Width
(Note 1)
36
40
ns
RD to Data High-Z
(Note 1)
38
40
ns
E Pulse Width
38
42
ns
R/W Setup Time to Enable
10
16
ns
R/W Hold Time After Enable
0
0
ns
t
AVPV
Address Input Valid to
Address Output Delay
(Note 4)
30
35
ns
Read Timing
(3.0 V to 3.6 V Versions)
Microcontroller Interface – PSD835G2 AC/DC Parameters
(3.0 V to 3.6 V Versions)
NOTES:
1. RD timing has the same timing as DS and PSEN signals.
2. RD and PSEN have the same timing for 80C51.
3. Any input used to select an internal PSD835G2V function.
4. In multiplexed mode latched address generated from ADIO delay to address output on any Port.
5. RD timing has the same timing as DS.
相關PDF資料
PDF描述
PSD835G2 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ57160 with optional Total Dose Rating of 1000kRads
PSD835G2V 150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available with 300 kRads Total Dose Rating.; Similar to IRHNA67164 with optional Total Dose Rating of 300 kRads.
PSD835G2-B-12B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
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PSD835G2-C-12B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
相關代理商/技術參數(shù)
參數(shù)描述
PSD835G2-70U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2-90U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2-90UI 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2V-12UI 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2V-90U 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray