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  • 參數(shù)資料
    型號: PSD835F3-B-70B81
    廠商: 意法半導(dǎo)體
    英文描述: Configurable Memory System on a Chip for 8-Bit Microcontrollers
    中文描述: 在8片位微控制器可配置存儲系統(tǒng)
    文件頁數(shù): 87/110頁
    文件大?。?/td> 570K
    代理商: PSD835F3-B-70B81
    PSD8XX Family
    PSD835G2
    86
    Symbol
    Parameter
    Conditions
    Min
    Typ
    Max
    Unit
    V
    CC
    V
    IH
    V
    IL
    V
    IH1
    V
    IL1
    V
    HYS
    V
    LKO
    Supply Voltage
    All Speeds
    3.0
    3.6
    V
    High Level Input Voltage
    3.0 V < V
    CC
    < 3.6 V
    3.0 V < V
    CC
    < 3.6 V
    (Note 1)
    .7 V
    CC
    –.5
    V
    CC
    +.5
    0.8
    V
    Low Level Input Voltage
    V
    Reset High Level Input Voltage
    .8 V
    CC
    –.5
    V
    CC
    +.5
    .2 V
    CC
    –.1
    V
    Reset Low Level Input Voltage
    (Note 1)
    V
    Reset Pin Hysteresis
    0.3
    V
    V
    CC
    Min for Flash Erase and Program
    1.5
    2.3
    V
    V
    OL
    Output Low Voltage
    I
    OL
    = 20 μA, V
    CC
    = 3.0 V
    0.01
    0.1
    V
    I
    OL
    = 4 mA, V
    CC
    = 3.0 V
    I
    OH
    = –20 μA, V
    CC
    = 3.0 V
    0.15
    0.45
    V
    V
    OH
    Output High Voltage Except V
    STBY
    On
    2.9
    2.99
    V
    I
    OH
    = –1 mA, V
    CC
    = 3.0 V
    I
    OH1
    = 1 μA
    2.7
    2.8
    V
    V
    OH1
    V
    SBY
    I
    SBY
    I
    IDLE
    V
    DF
    Output High Voltage V
    STBY
    On
    SRAM Standby Voltage
    V
    SBY
    – 0.8
    2.0
    V
    V
    CC
    1
    V
    SRAM Standby Current (V
    STBY
    Pin)
    Idle Current (V
    STBY
    Pin)
    SRAM Data Retention Voltage
    V
    CC
    = 0 V
    V
    CC
    > V
    SBY
    Only on V
    STBY
    0.5
    μA
    –0.1
    0.1
    μA
    2
    V
    I
    SB
    Standby Supply Current
    for Power Down Mode
    CSI >V
    CC
    –0.3 V
    (Notes 2 and 3)
    50
    100
    μA
    I
    LI
    I
    LO
    Input Leakage Current
    V
    SS
    < V
    IN
    < V
    CC
    0.45 < V
    IN
    < V
    CC
    –1
    ±.1
    1
    μA
    Output Leakage Current
    –10
    ±5
    10
    μA
    I
    O
    Output Current
    Refer to I
    OL
    and I
    OH
    in
    the V
    OL
    and V
    OH
    row
    ZPLD_TURBO = OFF,
    f = 0 MHz (Note 3)
    0
    mA
    PLD Only
    ZPLD_TURBO = ON,
    f = 0 MHz
    I
    CC
    (DC)
    (Note 5)
    Operating
    Supply Current
    200
    400
    μA/PT
    During FLASH
    Write/Erase Only
    FLASH
    10
    25
    mA
    Read Only, f = 0 MHz
    0
    0
    mA
    SRAM
    f = 0 MHz
    0
    0
    mA
    PLD AC Base
    (Note 4)
    Figure 32a
    I
    CC
    (AC)
    (Note 5)
    FLASH
    AC Adder
    1.5
    2.0
    mA/MHz
    SRAM AC Adder
    0.8
    1.5
    mA/MHz
    PSD835G2 DC Characteristics
    (3.0 V to 3.6 V Versions)
    Advance Information
    NOTES:
    1.
    Reset input has hysteresis. V
    IL1
    is valid at or below .2V
    CC
    –.1. V
    IH1
    is valid at or above .8V
    CC
    .
    CSI deselected or internal PD mode is active.
    PLD is in non-turbo mode and none of the inputs are switching.
    Refer to Figure 31a for PLD current calculation.
    I
    O
    = 0 mA.
    2.
    3.
    4.
    5.
    相關(guān)PDF資料
    PDF描述
    PSD835F3-B-70B81I Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD835F3-B-70J Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD835F3-B-70JI CAP 1.0UF 50V 10% X7R AXIAL MOLDED T&R R-MIL-PRF-39014
    PSD835F3-B-70M Configurable Memory System on a Chip for 8-Bit Microcontrollers
    PSD835F3-B-70MI Configurable Memory System on a Chip for 8-Bit Microcontrollers
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