• <label id="udy29"></label>
      <input id="udy29"><span id="udy29"></span></input>
      <label id="udy29"><td id="udy29"></td></label>
    • 參數(shù)資料
      型號(hào): PSD835F2-A-20J
      廠商: 意法半導(dǎo)體
      英文描述: Configurable Memory System on a Chip for 8-Bit Microcontrollers
      中文描述: 在8片位微控制器可配置存儲(chǔ)系統(tǒng)
      文件頁數(shù): 23/110頁
      文件大小: 570K
      代理商: PSD835F2-A-20J
      PSD8XX Family
      PSD835G2
      22
      9.1.1.7 Programming Flash Memory
      Flash memory must be erased prior to being programmed. The MCU may erase Flash
      memory all at once or by-sector. Flash memory sector erases to all logic ones (FF hex),
      and its bits are programmed to logic zeros. Although erasing Flash memory occurs on a
      sector basis, programming Flash memory occurs on a word basis.
      The PSD835G2 main Flash and secondary Flash memories require the MCU to send an
      instruction to program a word or perform an erase function (see Table 8).
      Once the MCU issues a Flash memory program or erase instruction, it must check for the
      status of completion. The embedded algorithms that are invoked inside the PSD835G2
      support several means to provide status to the MCU. Status may be checked using any of
      three methods: Data Polling, Data Toggle, or the Ready/Busy output pin.
      9.1.1.7.1 Data Polling
      Polling on DQ7 is a method of checking whether a Program or Erase instruction is in
      progress or has completed. Figure 4 shows the Data Polling algorithm.
      When the MCU issues a programming instruction, the embedded algorithm within the
      PSD835G2 begins. The MCU then reads the location of the word to be programmed in
      Flash to check status. Data bit DQ7 of this location becomes the compliment of data
      bit 7of the original data word to be programmed. The MCU continues to poll this location,
      comparing DQ7 and monitoring the Error bit on DQ5. When the DQ7 matches data bit 7 of
      the original data, and the Error bit at DQ5 remains
      0
      , then the embedded algorithm is
      complete. If the Error bit at DQ5 is
      1
      , the MCU should test DQ7 again since DQ7 may
      have changed simultaneously with DQ5 (see Figure 4).
      The Error bit at DQ5 will be set if either an internal timeout occurred while the embedded
      algorithm attempted to program the location or if the MCU attempted to program a
      1
      to a
      bit that was not erased (not erased is logic
      0
      ).
      It is suggested (as with all Flash memories) to read the location again after the embedded
      programming algorithm has completed to compare the word that was written to Flash with
      the word that was intended to be written.
      When using the Data Polling method after an erase instruction, Figure 4 still applies.
      However, DQ7 will be
      0
      until the erase operation is complete. A
      1
      on DQ5 will indicate
      a timeout failure of the erase operation, a
      0
      indicates no error. The MCU can read any
      location within the sector being erased to get DQ7 and DQ5.
      PSDsoft generates ANSI C code functions which implement these Data Polling
      algorithms.
      The
      PSD835G2
      Functional
      Blocks
      (cont.)
      相關(guān)PDF資料
      PDF描述
      PSD835F2-A-20JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
      PSD835F2-A-20M Configurable Memory System on a Chip for 8-Bit Microcontrollers
      PSD835F2-A-20MI Configurable Memory System on a Chip for 8-Bit Microcontrollers
      PSD835F2-A-20U Configurable Memory System on a Chip for 8-Bit Microcontrollers
      PSD835F2-A-20UI Configurable Memory System on a Chip for 8-Bit Microcontrollers
      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
      PSD835G2-70U 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
      PSD835G2-90U 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
      PSD835G2-90UI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
      PSD835G2V-12UI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
      PSD835G2V-90U 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray