參數(shù)資料
型號： PSD835F1-C-90B81I
廠商： 意法半導(dǎo)體
英文描述： Configurable Memory System on a Chip for 8-Bit Microcontrollers
中文描述： 在8片位微控制器可配置存儲系統(tǒng)
文件頁數(shù)： 70/110頁
文件大?。?/td> 570K
代理商： PSD835F1-C-90B81I
PSD835G2
PSD8XX Family
69
The
PSD835G2
Functional
Blocks
(cont.)
9.5.3 Reset and Power On Requirement
9.5.3.1 Power On Reset
Upon power up the PSD835G2 requires a reset pulse of tNLNH-PO (minimum 1 ms) after
V
CC
is steady. During this time period the device loads internal configurations, clears
some of the registers and sets the Flash into operating mode. After the rising edge of
reset, the PSD835G2 remains in the reset state for an additional tOPR (maximum 120 ns)
nanoseconds before the first memory access is allowed.
The PSD835G2 Flash memory is reset to the read array mode upon power up. The FSi
and CSBOOTi select signals along with the write strobe signal must be in the false
state during power-up reset for maximum security of the data contents and to remove
the possibility of data being written on the first edge of a write strobe signal. Any Flash
memory write cycle initiation is prevented automatically when V
CC
is below VLKO.
9.5.3.2 Warm Reset
Once the device is up and running, the device can be reset with a much shorter pulse of
tNLNH (minimum 150 ns). The same tOPR time is needed before the device is operational
after warm reset. Figure 31 shows the timing of the power on and warm reset.
OPERATING LEVEL
POWER ON RESET
V
CC
RESET
tNLNH
–
PO
tOPR
tNLNH-A
tNLNH
tOPR
WARM
RESET
Figure 31. Power On and Warm Reset Timing
9.5.3.3
I/OPin, Register and PLD Status at Reset
Table 29 shows the I/O pin, register and PLD status during power on reset, warm reset
and power down mode. PLD outputs are always valid during warm reset, and they are
valid in power on reset once the internal PSD configuration bits are loaded. This loading of
PSD is completed typically long before the V
CC
ramps up to operating level. Once the PLD
is active, the state of the outputs are determined by the equations specified in PSDsoft.
相關(guān)PDF資料
PDF描述
PSD835F1-C-90J Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835F1-C-90JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835F1-C-90M Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835F1-C-90MI Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835F1-C-90U Configurable Memory System on a Chip for 8-Bit Microcontrollers
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參數(shù)描述
PSD835G2-70U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2-90U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2-90UI 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2V-12UI 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
PSD835G2V-90U 功能描述:靜態(tài)隨機存取存儲器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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