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參數(shù)資料
| 型號(hào)： | PSD835F1-20B81 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Single Ended Active Clamp/Reset PWM 16-SOIC -40 to 85 |
| 中文描述： | 在8片位微控制器可配置存儲(chǔ)系統(tǒng) |
| 文件頁(yè)數(shù)： | 27/110頁(yè) |
| 文件大?。?/td> | 570K |
| 代理商： | PSD835F1-20B81 |
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PSD8XX Family
PSD835G2
26
The
PSD835G2
Functional
Blocks
(cont.)
9.1.1.9.3 Flash Erase Suspend Instruction
When a Flash Sector Erase operation is in progress, the Erase Suspend instruction will
suspend the operation by writing 0B0h to any even address when an appropriate Chip
Select (FSi or CSBOOTi) is true. (See Table 8). This allows reading of data from another
Flash sector after the Erase operation has been suspended. Erase suspend is accepted
only during the Flash Sector Erase instruction execution and defaults to read array
mode. An Erase Suspend instruction executed during an Erase timeout will, in addition to
suspending the erase, terminate the time out.
The Toggle Bit DQ6 stops toggling when the PSD835G2 internal logic is suspended. The
toggle Bit status must be monitored at an address within the Flash sector being erased.
The Toggle Bit will stop toggling between 0.1 μs and 15 μs after the Erase Suspend
instruction has been executed. The PSD835G2 will then automatically be set to Read
Flash Block Memory Array mode.
If an Erase Suspend instruction was executed, the following rules apply:
Attempting to read from a Flash sector that was being erased will output invalid data.
Reading from a Flash sector that was
not
being erased is valid.
The Flash memory
cannot
be programmed, and will only respond to Erase Resume
and Reset instructions (read is an operation and is OK).
If a Reset instruction is received, data in the Flash sector that was being erased will
be invalid.
9.1.1.9.4 Flash Erase Resume Instruction
If an Erase Suspend instruction was previously executed, the erase operation may be
resumed by this instruction. The Erase Resume instruction consists of writing 030h to any
even address while an appropriate Chip Select (FSi or CSBOOTi) is true. (See Table 8.)
9.1.1.10 Specific Features
9.1.1.10.1 Main Flash and Secondary Flash Sector Protect
Each sector of main Flash and secondary Flash memory can be separately protected
against Program and Erase functions. Sector Protection provides additional data
security because it disables all program or erase operations. This mode can be activated
(or deactivated) through the JTAG-ISP Port or a Device Programmer.
Sector protection can be selected for each sector using the PSDsoft program. This will
automatically protect selected sectors when the device is programmed through the JTAG
Port or a Device Programmer. Flash sectors can be unprotected to allow updating of their
contents using the JTAG Port or a Device Programmer. The microcontroller can read (but
cannot change) the sector protection bits.
Any attempt to program or erase a protected Flash sector will be ignored by the device.
The Verify operation will result in a read of the protected data. This allows a guarantee of
the retention of the Protection status.
The sector protection status can either be read by the MCU through the Flash protection
and secondary Flash protection registers (CSIOP) or use the read sector protection
instruction (Table 8).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PSD835F1-20B81I | Single Ended Active Clamp/Reset PWM 16-PDIP -40 to 85 |
| PSD835F1-20J | Single Ended Active Clamp/Reset PWM 16-PDIP -40 to 85 |
| PSD835F1-20JI | Single Ended Active Clamp/Reset PWM 16-SOIC -40 to 85 |
| PSD835F1-20M | Single Ended Active Clamp/Reset PWM 16-SOIC -40 to 85 |
| PSD835F1-20MI | Single Ended Active Clamp/Reset PWM 16-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSD835G2-70U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90UI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-12UI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-90U | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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