
1
MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS22A78-E
TRANSFER-MOLD TYPE
INSULATED TYPE
Dec. 2010
PS22A78-E
MAIN FUNCTION AND RATINGS
3 phase inverter with N-side open emitter structure
1200V / 35A (CSTBT)
APPLICATION
0.2~5.5kW / AC400Vrms motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
● For P-side
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
● For N-side
: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
● Temperature monitoring : Analog output of LVIC temperature
● Input interface : 5V line, Schmitt trigger receiver circuit (High Active)
● UL Approved
: Yellow Card No. E80276
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-NU,NV,NW
900
V
VCC(surge)
Supply voltage (surge)
Applied between P-NU,NV,NW
1000
V
VCES
Collector-emitter voltage
1200
V
±IC
Each IGBT collector current
TC= 25°C
35
A
±ICP
Each IGBT collector current (peak)
TC= 25°C, less than 1ms
70
A
PC
Collector dissipation
TC= 25°C, per 1 chip
129.9
W
Tj
Junction temperature
-20~+150
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Ratings
Unit
VD
Control supply voltage
Applied between VP1-VPC, VN1-VNC
20
V
VDB
Control supply voltage
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
20
V
VIN
Input voltage
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
-0.5~VD+0.5
V
VFO
Fault output supply voltage
Applied between FO-VNC
-0.5~VD+0.5
V
IFO
Fault output current
Sink current at FO terminal
1
mA
VSC
Current sensing input voltage
Applied between CIN-VNC
-0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VCC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
800
V
TC
Module case operation temperature
(Note 1)
-20~+100
°C
Tstg
Storage temperature
-40~+125
°C
Viso
Isolation voltage
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
2500
Vrms
Note 1: Tc measurement point is described in Fig.1.
THERMAL RESISTANCE
Limits
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Rth(j-c)Q
Inverter IGBT part (per 1/6 module)
-
0.77
°C/W
Rth(j-c)F
Junction to case thermal
resistance
(Note 2)
Inverter FWDi part (per 1/6 module)
-
1.25
°C/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal
conductivity: 1.0W/mk).