SST原裝進(jìn)口Flash芯片SST39VF160

16 Mbit (x16) Multi-Purpose Flash
SST39LF160 / SST39VF160
FEATURES:
? Organized as 1M x16
? Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF160
– 2.7-3.6V for SST39VF160
? Superior Reliability
– Endurance: 100,000 Cycles (typICal)
– Greater than 100 years Data Retention
? Low Power Consumption
– Active Current: 15 mA (typical)
– Standby Current: 4 μA (typical)
– Auto Low Power Mode: 4 μA (typical)
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Fast Read Access Time
– 55 ns for SST39LF160
– 70 and 90 ns for SST39VF160
? Latched Address and Data
? Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– BLOCK-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 μs (typical)
– Chip Rewrite Time: 15 seconds (typical) for
SST39LF/VF160
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
? CMOS I/O Compatibility
? JEDEC Standard
– Flash EEPROM Pinouts and command sets
? Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)

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