參數(shù)資料
型號： PPNHZ52F120A
廠商： MICROSEMI CORP-LAWRENCE
元件分類： IGBT 晶體管
英文描述： N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 52 A, 1200 V, N-CHANNEL IGBT, TO-258AA
封裝： TO-258, 3 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 102K
代理商： PPNHZ52F120A
Datasheet# MSC1376.PDF
PPNGZ52F120A
PPNHZ52F120A
PPC INC.
1200 Volts
52 Amps
3.2 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: PPNH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (PPNHZ52F120A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
≥
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj= 90
°
C
Peak Collector Current (pulse width limited by T
jmax
,)
Tj= 25
°
C
Tj= 90
°
C
Avalanche energy (single pulse)
@ I
C
= 25A,
V
CC
= 50V, L= 200
μ
H,
R
G
= 25
, Tj= 25
°
C
Short circuit current (SOA) ,
V
CE
≤
1200V, T
J
= 150
°
C, t
sc
≤
10
μ
s
Short circuit (reverse) current (RBSOA) ,
V
CE
≤
1200V, T
J
= 150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, PPNHZ52F120A only)
Pulse Source Current (Body Diode, PPNHZ52F120A only)
Thermal Resistance, Junction to Case
BV
CES
1200
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM(25)
I
CM(90)
E
AS
1200
+/-20
+/-30
52
33
104
66
65
Volts
Volts
Volts
Amps
Amps
mJ
I
C(sc)
260
66
300
A
A
I
C(sc)RBSOA
P
D
T
j
T
stg
I
S
I
SM
θ
JC
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
50
100
0.42
Maximum Ratings @ 25
°
C (unless otherwise specified)
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
TO-258
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