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參數(shù)資料
| 型號： | PNZ115(PN115) |
| 英文描述： | PNZ115 (PN115) - Silicon NPN Phototransistor |
| 中文描述： | PNZ115（PN115） -硅npn型光電晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | PNZ115(PN115) |
1
Photo-
detectors
PNZ115
(PN115)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide directional sensitivity, matched to GaAs LEDs :
θ
= 35 deg.
(typ.)
Fast response : t
r
= 5
μ
s (typ.)
Side-view type package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
0.02
4.5
900
35
5
6
0.3
max
2
Unit
μ
A
mA
nm
deg.
μ
s
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
2.0
0.6
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Phototransistors
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Unit : mm
2.3
1.9
4.5
±
0.3
1
2
3
1.2
4.2
±
0.3
3.5
±
0.2
4
±
0
2
2
1
1
2
0.45
±
0.2
3-0.45
±
0.2
N
1.27
1.27
1: Emitter
2: Collector
3: Base
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
5
5
10
100
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Note) The part number in the parenthesis shows conventional part number.
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