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參數(shù)資料
| 型號(hào)： | PNA4S87F |
| 英文描述： | Opto-Electronic Device - Photo Detectors - Photo ICs |
| 中文描述： | 光電子器件-攝影探測(cè)器-照片集成電路 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | PNA4S87F |
PNA4S87F
2
SHE00049AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Operating supply voltage
*5
V
ref
supply voltage
*5, 6
Supply current
Output voltage
*1
Offset voltage
*2
Cut-off frequency
*3, 4
V
CC
4.5
5.0
5.5
V
V
ref
I
CC
V
O
2.25
2.5
2.75
V
No signal
17
20
mA
PI
=
100
μ
W,
λ
= 780 nm
140
8
190
240
mV
V
off
f
C(
3 dB)
t
r
, t
f
V
om
0
8
mV
75
100
MHz
Switching time
Maximum output voltage
*2, 4
V
O
=
1 V
2.0
5
ns
2.2
V
I
Electro-Optical Characteristics
V
CC
=
5.0 V, V
ref
=
2.5 V, R
L
=
10 k
, C
L
=
10 pF, VR
=
200
, T
a
=
25
°
C
±
3
°
C
Note)*1: Standard voltage level: V
ref
(exclude offset voltage)
*2: Standard voltage level: V
ref
*3: The frequency that the output level is
3 dB. (The output voltage at f
C
=
1 MHz is the reference)
*4: Guarantee item on design
*5: (V
CC
V
ref
) voltage: More than 2.2 V
*6: Use it with the condition that becomes V
ref
=
V
CC
/2
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Supply voltage
V
CC
6
V
Power dissipation
P
D
T
opr
T
stg
250
mW
Operating ambient temperature
20 to
+
70
40 to
+
85
°
C
°
C
Storage temperature
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