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參數(shù)資料
| 型號： | PNA1801L(PN168) |
| 英文描述： | PNA1801L (PN168) - Silicon NPN Phototransistor |
| 中文描述： | PNA1801L（PN168） -硅npn型光電晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | PNA1801L(PN168) |
1
PNA1801
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
3 plastic package
Phototransistors
1: Emitter
2: Collector
3.0
±
0.2
3.8
±
0.2
2-0.8 max.
2-0.5
±
0.1
0.5
±
0.1
2.54
5
±
0
1
1
±
1
4
±
0
0
1
(
1
2
N
Unit : mm
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
30
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.005
3
800
35
4
0.2
max
0.5
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
0.8
0.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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