參數(shù)資料
型號(hào)： PNA1401L(PN101)
英文描述： PNA1401L (PN101) - Silicon NPN Phototransistor
中文描述： PNA1401L（PN101） -硅npn型光電晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 42K
代理商： PNA1401L(PN101)
1
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
5
3.5
800
10
3
0.2
max
300
Unit
nA
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 500 lx
*1
1.5
0.4
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LED’s
Low dark current : I
CEO
= 5 nA (typ.)
Fast response : t
r
, t
f
= 3
μ
s (typ.)
TO-18 standard type package
PNA1401
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
30
5
50
150
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Glass lens
6
±
0
1: Emitter
2: Collector
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
2-0.45
±
0.05
1
4
±
3
1
2
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
相關(guān)PDF資料
PDF描述
PNA1601 PHOTOTRANSISTOR | NPN | 850NM PEAK WAVELENGTH | 20M | LED-7B
PNA1601M(PN166) PNA1601M (PN166) - Silicon NPN Phototransistor
PNA1605 PHOTOTRANSISTOR | NPN | 900NM PEAK WAVELENGTH | 10M | LED-7A
PNA1605F(PN116) PNA1605F (PN116) - Silicon NPN Phototransistor
PNA1801 PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | DOME-3.0
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PNA14X14 制造商:n/a 功能描述:Ships in 2 days
PNA1601 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 850NM PEAK WAVELENGTH | 20M | LED-7B
PNA1601M 功能描述:NPN PHOTOTRANS 850NM SIDE VIEW RoHS:否 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測(cè)器 - 光電晶體管 系列:* 標(biāo)準(zhǔn)包裝:1,200 系列:- 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:1mA 電流 - 暗 (Id)（最大）:100nA 波長(zhǎng):880nm 視角:24° 功率 - 最大:100mW 安裝類型:通孔 方向:頂視圖 封裝/外殼:徑向
PNA1601M(PN166) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNA1601M (PN166) - Silicon NPN Phototransistor
PNA1605 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 900NM PEAK WAVELENGTH | 10M | LED-7A
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*