
P
PN4391
PN4392
PN4393
MMBF4391
MMBF4392
MMBF4393
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced
from Process 51. See J111 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
30
- 30
50
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
PN4391
350
2.8
125
357
*MMBF4391
225
1.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
556
GSD
TO-92
SOT-23
Mark: 6J / 6K / 6G
G
S
D
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation