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參數(shù)資料
| 型號： | PN4275 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Switching Transistor(NPN開關(guān)晶體管) |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | PN4275 |
P
NPN Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
B
Base Cutoff Current
I
CBO
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
I
C
= 10
μ
A, I
B
= 0
V
CE
= 20 V
V
CB
= 20 V, I
E
= 0,
T
A
= 65
°
C
15
40
4.5
40
V
V
V
V
μ
A
μ
A
0.4
10
ON CHARACTERISTICS*
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0 V, f = 1.0 MHz
I
= 10 mA, V
CE
= 10 V,
f = 100 MHz
4.0
pF
4.0
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Storage Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
on
t
d
t
r
t
off
t
s
t
f
t
s
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.3 mA,
V
BE (off)
= -3.0 V
V
CC
= 3.0 V, I
C
= 10 mA
I
B1
= I
B2
= 3.3 mA
V
BE (off)
= -3.0 V
I
C
= I
B1
= I
B2
= 10 mA
12
9.0
7.0
12
8.0
8.0
13
ns
ns
ns
ns
ns
ns
ns
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 30 mA, V
CE
= 0.4 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 10 mA, I
B
= 3.3 mA
I
C
= 100 mA, I
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA,
T
A
= 65
°
C
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 10 mA, I
B
= 3.3 mA
I
C
= 100 mA, I
B
= 10 mA
35
30
18
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.20
0.25
0.18
0.50
0.30
0.85
1.15
1.0
1.6
V
V
V
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.72
0.74
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN4275_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor |
| PN4275_D26Z | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4275_Q | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4294 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92 |
| PN42LE02QE | 制造商:C&K Components 功能描述:PN42LE02QE |
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