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參數(shù)資料
| 型號： | PN4250A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP通用放大器) |
| 中文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | PN4250A |
P
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CES
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 5.0 mA, I
B
= 0
60
V
I
C
= 10
μ
A, I
B
= 0
60
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
60
5.0
V
V
nA
nA
10
20
ON CHARACTERISTICS*
h
FE
DC Current Gain
Collector-Emitter Saturation Voltage
V
CE
= 5.0 V, I
C
= 100
μ
A
I
C
= 10 mA, I
B
= 0.5 mA
250
700
0.25
V
CE(
sat
)
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
h
fe
Small-signal Current Gain
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
NF
Noise Figure
V
CB
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, I
C
= 1.0 mA,
f = 1.0 kHz
6.0
800
20
50
10
2.0
pF
250
6.0
5.0
k
μ
mhos
x10
-4
dB
V
CE
= 5.0 V, I
C
= 250
μ
A,
R
S
= 1.0 k
, f = 1.0 kHz,
B
W
= 150 Hz
V
CE
= 5.0 V, I
C
= 20
μ
A,
R
S
= 10 k
, f = 1.0 kHz,
B
W
= 150 Hz
2.0
dB
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
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| PN4250A_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| PN4250A_D27Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4250A_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4258 | 功能描述:兩極晶體管 - BJT Switching Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4258_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Switching Transistor |
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