參數(shù)資料
型號(hào): PN4250
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP General Purpose Amplifier(PNP通用放大器)
中文描述: 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 24K
代理商: PN4250
P
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CES
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 5.0 mA, I
B
= 0
40
V
I
C
= 10
μ
A, I
B
= 0
40
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 40 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
40
5.0
V
V
nA
nA
10
20
ON CHARACTERISTICS*
h
FE
DC Current Gain
Collector-Emitter Saturation Voltage
V
CE
= 5.0 V, I
C
= 100
μ
A
I
C
= 10 mA, I
B
= 0.5 mA
250
700
0.25
V
CE(
sat
)
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
NF
Noise Figure
V
CB
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, I
C
= 1.0 mA,
f = 1.0 kHz
6.0
20
50
10
2.0
pF
k
6.0
5.0
μ
mhos
x10
-4
dB
V
CE
= 5.0 V, I
C
= 250
μ
A,
R
S
= 1.0 k
, f = 1.0 kHz,
B
W
= 150 Hz
V
CE
= 5.0 V, I
C
= 20
μ
A,
R
S
= 10 k
, f = 1.0 kHz,
B
W
= 150 Hz
2.0
dB
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
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