- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370012 > PN4122 (FAIRCHILD SEMICONDUCTOR CORP) PNP General Purpose Amplifier(PNP通用放大器) PDF資料下載
參數(shù)資料
| 型號： | PN4122 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier(PNP通用放大器) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 28K |
| 代理商： | PN4122 |
P
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
B
Base Cutoff Current
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
I
C
= 10
μ
A
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 30 V, T
A
= 65
°
C
40
40
5.0
40
V
V
V
nA
nA
nA
μ
A
25
25
25
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 100
μ
A
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
100
150
150
30
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.13
0.14
0.30
0.75
0.90
1.10
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.70
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
C
ib
Input Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
4.5
8.0
pF
pF
4.5
150
450
h
ie
h
re
h
oe
rb’Cc
Input Impedance
Voltage Feedback Ratio
Output Admittance
Collector-Base Time Constant
4.0
12
4.0
40
50
k
x10
-4
μ
mhos
ps
8.0
V
CE
= 20 V, I
C
= 10 mA
f = 80 MHz
V
CE
= 5.0 V, I
C
= 1.0 mA,
R
S
= 100
,
f = 100 MHz,
B
w
= 15 MHz
V
CE
= 5.0 V, I
C
= 100
μΑ
,
R
S
= 1.0 k
, PB
w
= 15.7 kHz
NF
Noise Figure
6.0
4.0
dB
dB
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
on
t
d
t
r
t
off
t
s
t
f
V
CC
= 30 V, I
C
= 50 mA,
I
B1
= 5.0 mA, V
BE
( off )
= 3.0 V
40
15
40
150
140
40
ns
ns
ns
ns
ns
ns
V
CC
= 30 V, I
C
= 50 mA
I
B1
= I
B2
= 5.0 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PN4141 | NPN General Purpose Amplifier(NPN通用放大器) |
| PN4143 | PNP General Purpose Amplifier(PNP通用放大器) |
| PN4248 | PNP Low Level Low Noise Amplifiers |
| PN4248 | PNP SILICON AF LOW NOISE AMALL SIGNAL TRANSISTORS |
| PN4249 | PNP General Purpose Amplifier(PNP通用放大器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN4122_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| PN4122_D27Z | 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN4122_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN412211 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOKTM Common Anode Dual Diode Module 1100 Amperes / Up to 2600 Volts |
| PN412411 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOKTM Common Anode Dual Diode Module 1100 Amperes / Up to 2600 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。