參數(shù)資料
型號: PN147S
英文描述: PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
中文描述: 光電晶體管|叩| 800NM峰值波長| 2000萬|發(fā)光二極管- 8c的
文件頁數(shù): 1/3頁
文件大?。?/td> 319K
代理商: PN147S
1
PNZ147
(PN147)
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)1*3
I
CE(L)2
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.01
12
3.5
800
24
3
0.2
max
0.5
Unit
μ
A
μ
A
mA
nm
deg.
μ
s
V
Dark current
V
CE
= 10V
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
Collector photo current
3
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
10
0.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
2.8
±
0.2
3.2
±
0.3
0
±
0
0
45
1
2
10.0 min.
Type number : Emitter mark (Green)
10.0 min.
3.2
±
0.3
1.8
1.8
(
(
0
±
0
2
±
0
2
±
0
1
±
0
0
±
R0.9
1.8
1: Collector
2: Emitter
Unit : mm
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
*3
I
CE(L)
Classifications
Class
I
CE(L)
(
μ
A)
Q
R
S
3.0 to 11.0
7.0 to 24.0
>16.0
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Features
High sensitivity
Wide spectral sensitivity, matched to GaAs LEDs
Fast response : t
r
, t
f
= 3
μ
s (typ.)
Small size designed for easier mounting to printed circuit board
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料
PDF描述
PNZ147(PN147) 光デバイス - 受光素子 - フォトトランジスタ
PNZ147Q PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PNZ147R PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PNZ147S PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PN147Q PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
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