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參數(shù)資料
| 型號(hào)： | PMLL5225B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 37K |
| 代理商： | PMLL5225B |
1996 Apr 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PMLL5225B to PMLL5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series:
±
5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The series consists of 43 types with nominal working
voltages from 3.0 to 75 V.
Fig.1 Simplified outline (SOD80C) and symbol.
The cathode is indicated by a yellow band.
handbook, 4 columns
MAM215
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
If flanges are kept at T
flange
≤
75
°
C.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
250
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
= 25
°
C; note 1
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
t
p
= 8.3 ms; square wave;
T
j
≤
55
°
C prior to surge
see Table
“Per type”
P
tot
P
ZSM
total power dissipation
non-repetitive peak reverse power
dissipation
500
40
mW
W
10
W
T
stg
T
j
storage temperature
junction temperature
65
65
+200
+200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
I
F
= 200 mA; see Fig.4
1.1
V
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