參數(shù)資料
型號(hào): PMEGXX05EH
廠商: NXP Semiconductors N.V.
英文描述: 0.5 A very low VF MEGA Schottky barrier rectifiers
中文描述: 0.5安很低正向壓降MEGA肖特基勢(shì)壘整流器
文件頁(yè)數(shù): 4/13頁(yè)
文件大小: 77K
代理商: PMEGXX05EH
9397 750 14515
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 12 April 2005
4 of 13
Philips Semiconductors
PMEGxx05EH/EJ series
0.5 A very low V
F
MEGA Schottky barrier rectifiers
6.
Thermal characteristics
[1]
Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse power
losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
SOD123F
SOD323F
Conditions
in free air
Min
Typ
Max
Unit
[1] [2]
-
-
-
-
-
330
350
150
K/W
K/W
K/W
[1] [3]
-
R
th(j-sp)
thermal resistance from junction
to solder point
SOD123F
SOD323F
-
-
-
-
60
55
K/W
K/W
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