參數(shù)資料
型號(hào): PMEG2005AEL-2
廠商: NXP Semiconductors N.V.
英文描述: 0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package
中文描述: 無鉛超小型SOD882封裝的0.5安超低正向壓降MEGA肖特基勢(shì)壘整流器
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 44K
代理商: PMEG2005AEL-2
9397 750 13201
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 27 April 2004
3 of 8
Philips Semiconductors
PMEG2005AEL
0.5 A ultra low V
F
MEGA Schottky rectifier
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
6.
Thermal characteristics
[1]
Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
[2]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
7.
Characteristics
[1]
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
Conditions
in free air
Value
Unit
K/W
[1] [2]
500
Table 7:
T
amb
= 25
°
C unless otherwise specified
Symbol
Parameter
V
F
continuous forward
voltage
Characteristics
Conditions
see
Figure 1
;
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
see
Figure 2
;
V
R
= 10 V
V
R
= 20 V
V
R
= 1 V; f = 1 MHz;
see
Figure 3
Typ
Max
Unit
25
75
135
220
375
60
110
190
290
440
mV
mV
mV
mV
mV
I
R
continuous reverse
current
[1]
210
370
19
600
1500
25
μ
A
μ
A
pF
C
d
diode capacitance
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