參數(shù)資料
型號: PMEG1030EJ,135
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3 A, 10 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, SC-90, 2 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 105K
代理商: PMEG1030EJ,135
PMEG1030EH_EJ_4
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
3 of 9
NXP Semiconductors
PMEG1030EH; PMEG1030EJ
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
10
V
IF
forward current
Tsp ≤ 55 °C-
3
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ≤ 0.25
-
5.5
A
IFSM
non-repetitive peak forward
current
t = 8 ms; square
wave
A
Ptot
total power dissipation
Tamb ≤ 25 °C
PMEG1030EH
375
mW
830
mW
PMEG1030EJ
360
mW
830
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
65
+150
°C
Tstg
storage temperature
65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
PMEG1030EH
330
K/W
150
K/W
PMEG1030EJ
350
K/W
150
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
PMEG1030EH
-
60
K/W
PMEG1030EJ
-
55
K/W
相關(guān)PDF資料
PDF描述
PMNF2-5F-C 2.5 mm2, COPPER ALLOY, TIN FINISH, FORK TERMINAL
PMSS-02-16-HP-03.00-D-LDX 2 CONTACT(S), FEMALE, POWER CONNECTOR
PMSS-02-16-HP-03.00-D-LUX 2 CONTACT(S), FEMALE, POWER CONNECTOR
PMSS-02-16-SP-03.00-D-LDX 2 CONTACT(S), FEMALE, POWER CONNECTOR
PMSS-02-16-SP-03.00-D-LUX 2 CONTACT(S), FEMALE, POWER CONNECTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMEG1201AESFYL 功能描述:DIODE SCHOTTKY 12V 0.1A SOD962 制造商:nexperia usa inc. 系列:- 包裝:剪切帶(CT) 零件狀態(tài):停產(chǎn) 二極管類型:肖特基 電壓 - DC 反向(Vr)(最大值):12V 電流 - 平均整流(Io):100mA 不同 If 時的電壓 - 正向(Vf:200mV @ 30mA 速度:快速恢復 = 200mA(Io) 反向恢復時間(trr):2.2ns 不同?Vr 時的電流 - 反向漏電流:2mA @ 12V 不同?Vr,F(xiàn) 時的電容:26pF @ 1V,1MHz 安裝類型:表面貼裝 封裝/外殼:0201(0603 公制) 供應商器件封裝:DSN0603-2 工作溫度 - 結(jié):125°C(最大) 標準包裝:1
PMEG2002AESF,315 制造商:NXP Semiconductors 功能描述:PMEG2002AESF/SOD962/REELP2// - Tape and Reel
PMEG2002AESFBYL 功能描述:DIODE SCHTKY 20V 200MA DSN0603B2 制造商:nexperia usa inc. 系列:- 包裝:剪切帶(CT) 零件狀態(tài):在售 二極管類型:肖特基 電壓 - DC 反向(Vr)(最大值):20V 電流 - 平均整流(Io):200mA 不同 If 時的電壓 - 正向(Vf:375mV @ 200mA 速度:小信號 =< 200mA(Io),任意速度 反向恢復時間(trr):1.9ns 不同?Vr 時的電流 - 反向漏電流:45μA @ 20V 不同?Vr,F(xiàn) 時的電容:25pF @ 1V,1MHz 安裝類型:表面貼裝 封裝/外殼:0201(0603 公制) 供應商器件封裝:DSN0603B-2 工作溫度 - 結(jié):125°C(最大) 標準包裝:1
PMEG2002ESF,315 制造商:NXP Semiconductors 功能描述:PMEG2002ESF/SOD962/REELP2// - Tape and Reel
PMEG2005AEA 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOD-323 制造商:NXP Semiconductors 功能描述:DIODE, SCHOTTKY, SOD-323