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參數(shù)資料
| 型號： | PMBZ5239B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage Regulator Diodes |
| 中文描述： | 9.1 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 66K |
| 代理商： | PMBZ5239B |
1999 May 17
3
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
see Table
“Per type”
200
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
= 25
°
C; note 1
T
amb
= 25
°
C; note 2
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.2
P
tot
total power dissipation
300
250
40
mW
mW
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
stg
T
j
65
+150
150
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 200 mA; see Fig.3
1.1
V
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