參數(shù)資料
型號(hào): PMBTA43
英文描述: NPN high-voltage transistors
中文描述: NPN高壓型晶體管
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 42K
代理商: PMBTA43
1997 Jul 02
3
Philips Semiconductors
Product specication
NPN high-voltage transistors
PMBTA42; PMBTA43
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
PMBTA42
300
V
PMBTA43
200
V
VCEO
collector-emitter voltage
open base
PMBTA42
300
V
PMBTA43
200
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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