
1999 Apr 22
2
Philips Semiconductors
Product specification
PNP general purpose transistors
PMSTA55; PMSTA56
FEATURES
High current (max. 500 mA)
Low voltage (max. 80 V).
APPLICATIONS
Intended for telephony and professional communication
equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: PMSTA05 and PMSTA06.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
2H
2G
PMSTA55
PMATA56
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
PMSTA55
PMSTA56
collector-emitter voltage
PMSTA55
PMSTA56
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
60
80
V
V
V
CEO
open base
65
65
60
80
4
500
500
500
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
≤
25
°
C; note 1