參數(shù)資料
型號(hào)： PM75RLB060
廠商： Mitsubishi Electric Corporation
英文描述： MITSUBISHI INTELLIGENT POWER MODULES
中文描述： 三菱智能功率模塊
文件頁數(shù)： 3/6頁
文件大小： 98K
代理商： PM75RLB060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLB060
FLAT-BASE TYPE
INSULATED PACKAGE
Apr. 2004
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
400
500
–
20 ~ +100
–
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc (base plate) measurement point is below.
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
10
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–
I
C
= 75A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 300V, I
C
= 75A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 75A
V
CIN
= 0V, Pulsed
(Fig. 1)
TOTAL SYSTEM
V
mA
V
μ
s
Unit
0.32*
0.53*
0.42*
0.71*
0.42
0.69
0.55
0.92
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Brake IGBT part
Brake FWDi part
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Brake IGBT part
Brake FWDi part
Case to fin, (per 1 module)
Thermal grease applied
(Note-2)
(Note-2)
(Note-2)
(Note-2)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
UP
IGBT
28.7
–
6.6
VP
WP
UN
VN
WN
Br
FWDi
28.7
0.8
IGBT
65.2
–
6.6
FWDi
65.2
2.5
IGBT
85.3
–
6.6
FWDi
85.3
2.5
IGBT
38.0
4.6
FWDi
38.0
–
4.5
IGBT
55.4
4.6
FWDi
55.4
–
4.5
IGBT
75.5
4.6
FWDi
75.5
–
4.5
IGBT
19.0
–
7.3
FWDi
23.0
6.6
arm
axis
X
Y
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.
(unit : mm)
Top view
Tc
N
P
B
U
V
W
Bottom view
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PM75RSE060 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
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