參數(shù)資料
型號： PM75RLA060
元件分類： 運動控制電子
英文描述： AC MOTOR CONTROLLER, 150 A, UFM25
文件頁數(shù)： 3/9頁
文件大小： 125K
代理商： PM75RLA060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLA060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2005
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT)
400
500
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125
°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
0.5
—
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V
15V
VCC = 300V, IC = 75A
Tj = 125
°C
Inductive Load
(Fig. 3,4)
VCE = VCES, VCIN = 15V
(Fig. 5)
VD = 15V, IC = 75A
VCIN = 0V
(Fig. 1)
TOTAL SYSTEM
V
mA
V
s
Unit
UP
IGBT
28.7
–6.6
VP
WP
UN
VN
WN
Br
FWDi
28.7
0.8
IGBT
65.2
–6.6
FWDi
65.2
2.5
IGBT
85.3
–6.6
FWDi
85.3
2.5
IGBT
38.0
4.6
FWDi
38.0
–4.5
IGBT
55.4
4.6
FWDi
55.4
–4.5
IGBT
75.5
4.6
FWDi
75.5
–4.5
IGBT
19.0
–7.3
FWDi
23.0
6.6
arm
axis
X
Y
Bottom view
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-1) Tc (under the chip) measurement point is below.
(unit : mm)
0.32*
0.53*
0.42*
0.71*
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT (per 1 element)
(Note-1)
Inverter FWDi (per 1 element)
(Note-1)
Brake IGBT
(Note-1)
Brake FWDi
(Note-1)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Symbol
Condition
Unit
Min.
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM75RLA060_05 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM75RLA120 功能描述:MOD IPM L-SERIES 1200V 75A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM75RLA120_05 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM75RLB060 功能描述:MOD IPM L-SERIES 600V 75A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PM75RLB120 功能描述:MOD IPM L-SERIES 1200V 75A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
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