參數(shù)資料
型號(hào): PM75RHA060
英文描述: TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C)
中文描述: 晶體管| IGBT功率模塊| 3 - PH值大橋| 600V的五(巴西)國(guó)際消費(fèi)電子展| 75A條一(c)
文件頁(yè)數(shù): 10/10頁(yè)
文件大?。?/td> 626K
代理商: PM75RHA060
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PM8610-BI Telecomm/Datacomm
PMD20K120 TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 14A I(C) | TO-3
PMD20K150 TRANSISTOR | BJT | DARLINGTON | NPN | 150V V(BR)CEO | 14A I(C) | TO-3
PMD20K200 TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 14A I(C) | TO-3
PMD25K120 High Speed, High Voltage High Side Gate Driver; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to +125°C
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參數(shù)描述
PM75RL1A060 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 75A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):75A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
PM75RL1A120 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
PM75RL1B060 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 600V, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:337W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-20C; No. of Pins:37;RoHS Compliant: Yes 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR
PM75RL1B120 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR
PM75RL1B120_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE