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參數(shù)資料
| 型號： | PM75CSE060 |
| 元件分類： | 運動控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 150 A, UFM22 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 132K |
| 代理商： | PM75CSE060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
10–2
100
7
5
3
2
25 7
102
101
10–1
7
5
3
2
103
4
100
102
7
5
3
2
101
7
5
3
2
4
32
3
5 7
4
Irr
VCC = 300V
VD = 15V
Tj = 25
°C
Tj = 125
°C
Inductive load
trr
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
REVERSE
RECOVERY
TIME
t
rr
(
s)
REVERSE
RECOVERY
CURRENT
l
rr
(A)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
0
20
40
60
80
100
25
0
510
15
20
N-side
P-side
VD = 15V
Tj = 25
°C
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th
(
j
–
c)
CARRIER FREQUENCY fc (kHz)
ID VS. fc CHARACTERISTICS
(TYPICAL)
CIRCUIT
CURRENT
I
D
(mA)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th
(
j
–
c)
Single Pulse
Per unit base = Rth(j – c)Q = 0.49
°C/W
Single Pulse
Per unit base = Rth(j – c)F = 1.38
°C/W
100
102
7
5
3
2
0
101
7
5
3
2
0.5
1
1.5
2
2.5
4
VD = 15V
Tj = 25
°C
Tj = 125
°C
COLLECTOR
RECOVERY
CURRENT
–
IC
(A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM75CSE060_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75CSE120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Controller Miscellaneous - Datasheet Reference |
| PM75CSE120_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75CTK060 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75CVA120 | 功能描述:MOD IPM 3PHASE IGB HF 1200V 75A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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