參數(shù)資料
型號: PM75CSE060
廠商: Mitsubishi Electric Corporation
英文描述: FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 平性基地型絕緣包裝
文件頁數(shù): 1/6頁
文件大?。?/td> 147K
代理商: PM75CSE060
MIMITSUBISHI <INTELLIGENT POWER MODULES>
PM75CSE060
ININSULATED PACKAGE
Sep. 2001
FLFLAT-BASE TYPE
PM75CSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
μ
m fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
3
φ
75A, 600V Current-sense IGBT for 15kHz switching
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
Acoustic noise-less 5.5/7.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
1. V
UPC
2. U
P
3. V
UP1
4. V
VPC
5. V
P
6. V
VP1
7. V
WPC
8. W
P
9. V
WP1
10. V
NC
11. V
N1
12. N
C
13. U
N
14. V
N
15. W
N
16. F
O
A : DETAIL
P
16
15
14
13
12
11
10
9
7 8
6
5
4
3
2
1
B
P
N
W
V
U
A
MOUNTING HOLES
1
12
16- 0.64
3
2-
φ
2.54
3
110
±
1
95
±
0.5
2-2.54
10.16
24.5
1
0.5
±
0.3
3.22
2
±
0
1
7
±
0
8
±
1
4
1
67.4
2
4
26
26
2
2
17.02
2-2.54
6-2.54
2-2.54
4-R6
6-M5NUTS
4-
φ
5.5
10.16
10.16
LABEL
1
1
1
3.22
2-2.54
φ
2.54
22
21.2
–0.5
0.64
Terminal code
Screwing depth
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