參數(shù)資料
型號(hào)： PM6675AS
廠商： STMICROELECTRONICS
元件分類(lèi)： 穩(wěn)壓器
英文描述： 3 A SWITCHING CONTROLLER, QCC24
封裝： 4 X 4 MM, LEAD FREE, VFQFPN-24
文件頁(yè)數(shù)： 35/48頁(yè)
文件大?。?/td> 2481K
代理商： PM6675AS
Application information
PM6675AS
40/48
In buck converters the power dissipation of the synchronous MOSFET is mainly due to
conduction losses:
Equation 43
Maximum conduction losses occur at the maximum input voltage:
Equation 44
The synchronous rectifier should have the lowest RDSon as possible. When the high-side
MOSFET turns on, high dV/dt of the phase node can bring up even the low-side gate
through its gate-drain capacitance CRES, causing cross-conduction problem. Once again,
the choice of the low-side MOSFET is a trade-off between on resistance and gate charge; a
good selection should minimizes the ratio CRSS / CGS where CGS = CISS - CRSS.
Below some tested low-side MOSFETs are listed.
Dual N-MOS can be used in applications with low output current.
shows some suitable dual MOSFETs for applications requiring about 3 A.
Table 14.
Evaluated high-side MOSFETs
Manufacturer
Type
RDSon (m)
Gate charge (Nc)
Rated reverse voltage (V)
ST
STS12NH3LL
10.5
12
30
ST
STS7NF60L
17
25
60
IR
IRF7811
9
18
30
Table 15.
Evaluated low-side MOSFETs
Manufacturer
Type
RDSon (m)
Rated reverse voltage
(V)
ST
STS12NH3LL
13.5
0.069
30
ST
STS25NH3LL
40
0.011
30
IR
IRF7811
24
0.054
30
Table 16.
Suitable dual MOSFETs
Manufacturer
Type
RDSon (m)
Gate charge (nC)
Rated reverse
voltage (V)
ST
STS8DNH3LL
25
10
30
IR
IRF7313
46
33
30
conduction
DLowSide
P
2
MAX
,
LOAD
MAX
,
IN
OUT
DSon
conduction
I
V
1
R
P
=
GS
GD
C
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