參數(shù)資料
型號(hào)： PM6670S
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： 3 A SWITCHING CONTROLLER, QCC24
封裝： 4 X 4 MM, LEAD FREE, VFQFPN-24
文件頁(yè)數(shù)： 29/54頁(yè)
文件大?。?/td> 742K
代理商： PM6670S
PM6670S
Device description
Doc ID 14432 Rev 4
35/54
7.1.9
Gate drivers
The integrated high-current gate drivers allow using different power MOSFETs. The high-
side driver uses a bootstrap circuit which is supplied by the +5 V rail. The BOOT and
PHASE pins work respectively as supply and return path for the high-side driver, while the
low-side driver is directly fed through VCC and PGND pins.
An important feature of the PM6670S gate drivers is the adaptive anti-cross-conduction
circuitry, which prevents high-side and low-side MOSFETs from being turned on at the same
time. When the high-side MOSFET is turned off, the voltage at the PHASE node begins to
fall. The low-side MOSFET is turned on only when the voltage at the PHASE node reaches
an internal threshold (2.5 V typ.). Similarly, when the low-side MOSFET is turned off, the
high-side one remains off until the LGATE pin voltage is above 1V.
The power dissipation of the drivers is a function of the total gate charge of the external
power MOSFETs and the switching frequency, as shown in the following equation:
Equation 23
The low-side driver has been designed to have a low-resistance pull-down transistor
(0.6
Ω typ.) in order to prevent undesired ignition of the low-side MOSFET due to the Miller
effect.
7.1.10
Reference voltage and bandgap
The 1.237 V internal bandgap reference has a granted accuracy of ±1 % over the
0 °C to 85 °C temperature range. The VREF pin is a buffered replica of the bandgap voltage.
It can supply up to ±100
μA and is suitable to set the intermediate level of MODE, DDRSEL
and DSCG multifunction pins. A 100 nF (min.) bypass capacitor toward SGND is required to
enhance noise rejection. If VREF falls below 0.8 V (typ.), the system detects a fault condition
and all the circuitry is turned OFF.
An internal divider derives a 0.9 V ± 1 % voltage (Vr) from the bandgap. This voltage is used
as a reference by the switching regulator output. The over-voltage protection, the under-
voltage protection and the power good signal are also referred to Vr.
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相關(guān)PDF資料
PDF描述
PM6670TR 1.4 A SWITCHING CONTROLLER, QCC24
PM6670ATR 1.4 A SWITCHING CONTROLLER, QCC24
PM6670 1.4 A SWITCHING CONTROLLER, QCC24
PM6675ASTR 3 A SWITCHING CONTROLLER, QCC24
PM6675AS 3 A SWITCHING CONTROLLER, QCC24
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM6670STR 功能描述:DC/DC 開(kāi)關(guān)控制器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
PM6670TR 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
PM6675 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:LDO CNTRLR STDN 0.6V TO 3.3V/1.5V 24PIN VFQFPN - Rail/Tube
PM6675AS 功能描述:DC/DC 開(kāi)關(guān)控制器 DDR 2/3 Memory Pwr Cntrl RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
PM6675ASTR 功能描述:低壓差控制器 - LDO Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:Micrel 最大輸入電壓:5.5 V 輸出電壓:Adjustable 輸出電流:10 mA 負(fù)載調(diào)節(jié): 輸出類型:Adjustable, Fixed 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-6
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