參數(shù)資料
型號： PM6670ASTR
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： 3 A SWITCHING CONTROLLER, QCC24
封裝： 4 X 4 MM, LEAD FREE, VFQFPN-24
文件頁數(shù)： 28/53頁
文件大?。?/td> 745K
代理商： PM6670ASTR
Device description
PM6670AS
34/53
Doc ID 14436 Rev 2
Figure 38.
Fast discharge and soft discharge options
7.1.9
Gate drivers
The integrated high-current gate drivers allow using different power MOSFETs. The high-
side driver uses a bootstrap circuit which is supplied by the +5 V rail. The BOOT and
PHASE pins work respectively as supply and return path for the high-side driver, while the
low-side driver is directly fed through VCC and PGND pins.
An important feature of the PM6670AS gate drivers is the adaptive anti-cross-conduction
circuitry, which prevents high-side and low-side MOSFETs from being turned on at the same
time. When the high-side MOSFET is turned off, the voltage at the PHASE node begins to
fall. The low-side MOSFET is turned on only when the voltage at the PHASE node reaches
an internal threshold (2.5 V typ.). Similarly, when the low-side MOSFET is turned off, the
high-side one remains off until the LGATE pin voltage is above 1 V.
The power dissipation of the drivers is a function of the total gate charge of the external
power MOSFETs and the switching frequency, as shown in the following equation:
Equation 23
The low-side driver has been designed to have a low-resistance pull-down transistor
(0.6
Ω typ.) in order to prevent undesired ignition of the low-side MOSFET due to the Miller
effect.
7.1.10
Reference voltage and bandgap
The 1.237 V internal bandgap reference has a granted accuracy of ±1% over the
0 °C to 85 °C temperature range. The VREF pin is a buffered replica of the bandgap voltage.
It can supply up to ±100
μA and is suitable to set the intermediate level of MODE, DDRSEL
and DSCG multifunction pins. A 100 nF (min.) bypass capacitor toward SGND is required to
enhance noise rejection. If VREF falls below 0.87 V (typ.), the system detects a fault
condition and all the circuitry is turned OFF.
An internal divider derives a 0.9 V±1% voltage (Vr) from the bandgap. This voltage is used
as a reference by the switching regulator output. The over-voltage protection, the under-
voltage protection and the Power-Good signal are also referred to Vr.
VDDQ
VTT
400mV
Fast discharge
VDDQ
VTT
Soft discharge
VDDQ
VTT
400mV
Fast discharge
VDDQ
VTT
Soft discharge
SW
g
DRV
D
f
Q
V
)
driver
(
P
=
相關(guān)PDF資料
PDF描述
PM6670AS 3 A SWITCHING CONTROLLER, QCC24
PM6670A 1.4 A SWITCHING CONTROLLER, QCC24
PM6670STR 3 A SWITCHING CONTROLLER, QCC24
PM6670S 3 A SWITCHING CONTROLLER, QCC24
PM6670TR 1.4 A SWITCHING CONTROLLER, QCC24
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM6670ATR 功能描述:直流/直流開關(guān)調(diào)節(jié)器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
PM6670S 功能描述:DC/DC 開關(guān)控制器 DDR 2/3 Memory Pwr Cntrl RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
PM6670STR 功能描述:DC/DC 開關(guān)控制器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
PM6670TR 功能描述:直流/直流開關(guān)調(diào)節(jié)器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
PM6675 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:LDO CNTRLR STDN 0.6V TO 3.3V/1.5V 24PIN VFQFPN - Rail/Tube
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