參數(shù)資料
型號: PM6670
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: 1.4 A SWITCHING CONTROLLER, QCC24
封裝: 4 X 4 MM, LEAD FREE, VFQFN-24
文件頁數(shù): 28/53頁
文件大小: 799K
代理商: PM6670
Obsolete
Product(s)
- Obsolete
Product(s)
Obsolete
Product(s)
- Obsolete
Product(s)
Device description
PM6670
34/53
7.1.9
Gate drivers
The integrated high-current gate drivers allow using different power MOSFETs. The high-
side driver uses a bootstrap circuit which is supplied by the +5V rail. The BOOT and PHASE
pins work respectively as supply and return path for the high-side driver, while the low-side
driver is directly fed through VCC and PGND pins.
An important feature of the PM6670 gate drivers is the Adaptive Anti-Cross-Conduction
circuitry, which prevents high-side and low-side MOSFETs from being turned on at the same
time. When the high-side MOSFET is turned off, the voltage at the PHASE node begins to
fall. The low-side MOSFET is turned on only when the voltage at the PHASE node reaches
an internal threshold (2.5V typ.). Similarly, when the low-side MOSFET is turned off, the
high-side one remains off until the LGATE pin voltage is above 1V.
The power dissipation of the drivers is a function of the total gate charge of the external
power MOSFETs and the switching frequency, as shown in the following equation:
Equation 23
The low-side driver has been designed to have a low-resistance pull-down transistor
(0.6
typ.) in order to prevent undesired ignition of the low-side MOSFET due to the Miller
effect.
7.1.10
Reference voltage and bandgap
The 1.237V internal bandgap reference has a granted accuracy of ±1% over the 0°C to
85°C temperature range. The VREF pin is a buffered replica of the bandgap voltage. It can
supply up to ±100
A and is suitable to set the intermediate level of MODE, DDRSEL and
DSCG multifunction pins. A 100nF (min.) bypass capacitor toward SGND is required to
enhance noise rejection. If VREF falls below 0.87V (typ.), the system detects a fault
condition and all the circuitry is turned OFF.
An internal divider derives a 0.9V±1% voltage (Vr) from the bandgap. This voltage is used
as a reference by the switching regulator output. The Over-Voltage Protection, the Under-
Voltage Protection and the Power-Good signal are also referred to Vr.
SW
g
DRV
D
f
Q
V
)
driver
(
P
=
相關PDF資料
PDF描述
PM6675ASTR 3 A SWITCHING CONTROLLER, QCC24
PM6675AS 3 A SWITCHING CONTROLLER, QCC24
PM6675ATR SWITCHING CONTROLLER, QCC24
PM6675TR SWITCHING CONTROLLER, QCC24
PM6675 SWITCHING CONTROLLER, QCC24
相關代理商/技術參數(shù)
參數(shù)描述
PM6670AS 功能描述:DC/DC 開關控制器 DDR 2/3 Memory Pwr Cntrl RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:CPAK
PM6670ASTR 功能描述:直流/直流開關調(diào)節(jié)器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開關頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
PM6670ATR 功能描述:直流/直流開關調(diào)節(jié)器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開關頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
PM6670S 功能描述:DC/DC 開關控制器 DDR 2/3 Memory Pwr Cntrl RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:CPAK
PM6670STR 功能描述:DC/DC 開關控制器 Complete DDR2/3 Mem Pwr supply controllr RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:CPAK