參數(shù)資料
型號： PM50CLB120_05
廠商： Mitsubishi Electric Corporation
英文描述： FLAT-BASE TYPE INSULATED PACKAGE
中文描述： 平性基地型絕緣包裝
文件頁數(shù)： 3/8頁
文件大?。?/td> 142K
代理商： PM50CLB120_05
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2005
UP
IGBT
28.3
–
7.7
VP
WP
UN
VN
WN
FWDi
28.4
1.5
IGBT
65.0
–
7.7
FWDi
64.9
1.5
IGBT
87.0
–
7.7
FWDi
86.9
1.5
IGBT
39.3
5.7
FWDi
39.2
–
3.5
IGBT
54.0
5.7
FWDi
54.1
–
3.5
IGBT
76.0
5.7
FWDi
76.1
–
3.5
arm
axis
X
Y
(Unit : mm)
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–
I
C
= 50A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 50A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 50A
V
CIN
= 0V
(Fig. 1)
V
mA
V
μ
s
Unit
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-1) T
C
(under the chip) measurement point is below.
Bottom view
0.26*
0.39*
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
–
40 ~ +125
2500
Unit
V
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
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