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參數(shù)資料
| 型號(hào)： | PM50B4LB060 |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 100 A, XMA37 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | PM50B4LB060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B4LB060
FLAT-BASE TYPE
INSULATED PACKAGE
Jun. 2007
8
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–323 5 710–223 5 710–1
10–523 5 710–423 5 7
23 5 7
100 23 57101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–323 5 710–223 5 710–1
10–523 5 710–423 5 7
23 5 7
100 23 57101
100
23
5 7
101
23
5 7
102
10–2
10–1
7
5
3
2
100
7
5
3
2
101
7
5
3
2
10–1
100
7
5
3
2
101
7
5
3
2
102
7
5
3
2
100
102
7
5
3
2
0
101
7
5
3
2
0.5
1
1.5
2
2.5
VD = 15V
Tj = 25°C
Tj = 125°C
Irr
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
trr
100
23
5 7
101
23
5 7
102
10–3
10–2
7
5
3
2
10–1
7
5
3
2
100
7
5
3
2
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
Err
Single Pulse
Per unit base = Rth(j – c)Q = 0.93°C/W
Single Pulse
Per unit base = Rth(j – c)F = 1.57°C/W
COLLECTOR
REVERSE
CURRENT
–I
C
(A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
FWDi FORWARD VOLTAGE CHARACTERISTICS
(TYPICAL)
REVERSE
RECOVERY
LOSS
E
rr
(mJ/Pulse)
COLLECTOR REVERSE CURRENT –IC (A)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
FWDi REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
REVERSE
RECOVERY
TIME
t
rr
(
s)
REVERSE
RECOVERY
CURRENT
l
rr
(A)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th
(
j–
c)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th
(
j–
c)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM50B4LB060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module, Transistor Polarity:-, DC Collector Current:50A, Collector Emitter |
| PM50B5LA060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM50B5LA060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5LB060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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