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參數(shù)資料
| 型號： | PM50B4LA060 |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 100 A, UFM25 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | PM50B4LA060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
Jun. 2007
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT)
450
500
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.3
2.0
3.3
1.4
0.2
0.4
1.8
0.2
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 50A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25°C
Tj = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
0.3
—
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
Tj = 25°C
Tj = 125°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V15V
VCC = 300V, IC = 50A
Tj = 125°C
Inductive Load
(Fig. 3,4)
VCE = VCES, VCIN = 15V
(Fig. 5)
VD = 15V, IC = 50A
VCIN = 0V
(Fig. 1)
TOTAL SYSTEM
V
mA
V
s
Unit
0.93
1.57
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1/4 module)
(Note-1)
Inverter FWDi part (per 1/4 module)
(Note-1)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Symbol
Condition
Unit
Min.
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
Parameter
Limits
Typ.
Max.
UP
IGBT
30.2
–7.9
VP
UN
VN
FWDi
30.7
–1.1
IGBT
59.0
–7.9
FWDi
59.5
–1.1
IGBT
38.2
6.5
FWDi
39.8
–0.3
IGBT
50.9
6.5
FWDi
49.4
–0.3
arm
axis
X
Y
(unit : mm)
Bottom view
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM50B4LA060_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B4LB060 | 功能描述:MOD PV-IPM H-BRDG 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM50B4LB060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module, Transistor Polarity:-, DC Collector Current:50A, Collector Emitter |
| PM50B5LA060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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