參數(shù)資料
型號(hào): PM50302F
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊)
中文描述: 硅N溝道功率場(chǎng)效應(yīng)晶體管模塊(不適用溝道功率MOSFET的模塊)
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 65K
代理商: PM50302F
PM50302F
3
Electrical Characteristics
(Ta = 25°C) (Per FET chip)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
V
(BR)GSS
±50
μA
V
GS
= ± 16 V, V
DS
= 0
I
G
= ±100 μA, V
DS
= 0
Gate to source breakdown
voltage
±20
V
Zero gate voltage drain current I
DSS
Gate to source threshold
voltage
1
mA
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
V
GS(th)
1.5
4.0
V
Drain to source saturation
voltage
V
DS(on)
2.25
3.0
V
I
D
= 15 A, V
GS
= 10 V*
1
Static Drain to source on state
resistance
R
DS(on)
0.15
0.20
I
D
= 15 A, V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
Ciss
15
25
S
I
D
= 15 A, V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0 V
f = 1 MHz
1
Input capacitance
6150
pF
Output capacitance
Coss
2160
pF
Reverse transfer capacitance
Crss
240
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
100
ns
I
D
= 15 A, V
GS
= 10 V
R
L
= 2
Rise time
480
ns
Turn-off delay time
500
ns
Fall time
400
ns
Body to drain diode forward
voltage
1.2
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
200
ns
I
= 15 A, V
= 0
diF/dt = 100 A/μs
Mechanical Characteristics
Item
Symbol
Condition
Rating
Unit
Fixing strength
Mounting into main-terminal with M4 screw
15 to 20
kgcm
Mounting into heat sink with M5 screw
15 to 25
kgcm
Weight
Typical value
220
g
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