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參數(shù)資料
| 型號： | PM25RL1B120 |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 50 A, XMA19 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 144K |
| 代理商： | PM25RL1B120 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25RL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
9
23 5 7
10–3
23 5 7
10–4
23 5 7
101
23 5 7
100
10–1
23 5 7
10–2
10–5
10–2
10–3
10–1
5
7
100
2
3
5
7
2
3
5
7
2
3
23 5 7
10–3
23 5 7
10–4
23 5 7
101
23 5 7
100
10–1
23 5 7
10–2
10–5
10–2
10–3
10–1
5
7
100
2
3
5
7
2
3
5
7
2
3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th(
j-c)
t(sec)
Single Pulse
IGBT part;
Per unit base = Rth(j-c)Q = 0.97
°C/W
FWDi part;
Per unit base = Rth(j-c)F = 1.60
°C/W
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
5
10
15
20
25
30
35
100
101
2
3
4
5
7
102
2
3
4
5
7
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
12
13
14
15
16
17
18
Tj = 25
°C
13V
VD = 17V
VD = 15V
Tj = 25
°C
Tj = 125
°C
VD = 15V
Tj = 25
°C
Tj = 125
°C
IC = 25A
Tj = 25
°C
Tj = 125
°C
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR
CURRENT
I
C
(A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION
VOLTAGE
V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION
VOLTAGE
V
CE(sat)
(V)
CONTROL POWER SUPPLY VOLTAGE VD (V)
COLLECTOR
RECOVERY
CURRENT
–I
C
(A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
15V
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
NORMALIZED
TRANSIENT
THERMAL
IMPEDANCE
Z
th(
j-c)
t(sec)
Single Pulse
IGBT part;
Per unit base = Rth(j-c)Q = 0.97
°C/W
FWDi part;
Per unit base = Rth(j-c)F = 1.60
°C/W
(Brake Part)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM25RL1C120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 25A 1200V 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 25A, 1.2KV, MODULE, IPM Power Device:IGBT, Current Rating (Ic / Id):25A, Isolation Voltage:2.5kV, IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
| PM25RLA120 | 功能描述:MOD IPM L-SER 7PAC 1200V 25A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM25RLA120_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM25RLB120 | 功能描述:MOD IPM L-SER 7PAC 1200V 25A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM25RLB120_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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