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參數(shù)資料
| 型號： | PM100CSE120_05 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 145K |
| 代理商： | PM100CSE120_05 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE120
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
10
0
10
2
7
5
4
3
2
0
10
1
7
5
4
3
2
1.5
2
2.5
1
0.5
3
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
10
–
2
10
0
7
5
4
3
2
10
1
2
3
5
7
10
2
10
–
1
7
5
4
3
2
2
3
5
7
10
10
0
10
2
7
5
4
3
2
10
1
7
5
4
3
2
4
4
t
rr
I
rr
V
CC
= 600V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
C
–
I
C
(
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT
–
I
C
(A)
R
r
(
μ
s
R
r
(
0
20
40
60
80
100
25
0
5
10
15
20
V
D
= 15V
T
j
= 25
°
C
N-side
P-side
10
1
10
–
3
10
0
7
5
3
2
10
–
2
7
5
3
2
10
–
1
7
5
3
2
7
5
3
2
10
–
3
2 3 57
10
–
2
2 3 57
10
–
1
2 3 57
10
0
2 3 57
10
1
TIME
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
N
T
t
–
CARRIER FREQUENCY f
c
(kHz)
I
D
VS. f
c
CHARACTERISTICS
(TYPICAL)
C
D
(
10
1
10
–
3
10
0
7
5
3
2
10
–
2
7
5
3
2
10
–
1
7
5
3
2
7
5
3
2
10
–
3
2 3 57
10
–
2
2 3 57
10
–
1
2 3 57
10
0
2 3 57
10
1
TIME
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
N
T
t
–
Single Pulse
Per unit base = R
th(j
–
c)Q
= 0.21
°
C/W
Single Pulse
Per unit base = R
th(j
–
c)F
= 0.35
°
C/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PM100CSJ060 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM100CVA060 | 功能描述:MOD IPM 6PAC 600V 100A RoHS:是 類別:半導體模塊 >> 功率驅動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM100CVA060_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM100CVA060_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM100CVA120 | 功能描述:MOD IPM 6PAC 1200V 100A RoHS:是 類別:半導體模塊 >> 功率驅動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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