參數(shù)資料
型號: PM100CSE060
廠商: Mitsubishi Electric Corporation
英文描述: FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 平性基地型絕緣包裝
文件頁數(shù): 3/8頁
文件大小: 156K
代理商: PM100CSE060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
TOTAL SYSTEM
P
B
P
N
W
V
U
Tc
65mm
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
1
10
Min.
0.8
Typ.
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
I
C
= 100A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 15V
0V
V
CC
= 300V, I
C
= 100A
T
j
= 125
°
C
Inductive Load (upper and lower arm)
(Fig. 3)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 4)
V
D
= 15V, I
C
= 100A
V
CIN
= 0V, Pulsed
(Fig. 1)
V
mA
V
μ
s
Unit
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
400
500
20 ~ +100
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= 125
°
C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
0.38
0.70
0.23
0.36
0.027
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c
)Q
R
th(j-c
)F
R
th(c-f)
(Note-2) T
C
measurement point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Symbol
Parameter
Test Condition
Unit
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Limits
Typ.
Min.
Max.
相關PDF資料
PDF描述
PM100CSE120 FLAT-BASE TYPE INSULATED PACKAGE
PM100CSE120_05 FLAT-BASE TYPE INSULATED PACKAGE
PM100CSJ060 FLAT-BASE TYPE INSULATED PACKAGE
PM100RLA120_05 INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE
PM100RLA120 INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
相關代理商/技術參數(shù)
參數(shù)描述
PM100CSE120 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM100CSE120_05 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM100CSE120_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM100CSJ060 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM100CVA060 功能描述:MOD IPM 6PAC 600V 100A RoHS:是 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊