- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄3787 > PK40X256VLQ100 (Freescale Semiconductor)IC ARM CORTEX MCU 256K 144-LQFP PDF資料下載
參數(shù)資料
| 型號(hào)： | PK40X256VLQ100 |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 30/78頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC ARM CORTEX MCU 256K 144-LQFP |
| 產(chǎn)品培訓(xùn)模塊： | Kinetis® Cortex-M4 Microcontroller Family |
| 標(biāo)準(zhǔn)包裝： | 90 |
| 系列： | Kinetis |
| 核心處理器： | ARM? Cortex?-M4 |
| 芯體尺寸： | 32-位 |
| 速度： | 100MHz |
| 連通性： | CAN，EBI/EMI，I²C，IrDA，SDHC，SPI，UART/USART，USB，USB OTG |
| 外圍設(shè)備： | DMA，I²S，LCD，LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 98 |
| 程序存儲(chǔ)器容量： | 256KB（256K x 8） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大小： | 4K x 8 |
| RAM 容量： | 64K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 1.71 V ~ 3.6 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 33x16b，D/A 2x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 105°C |
| 封裝/外殼： | 144-LQFP |
| 包裝： | 托盤 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當(dāng)前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁
Table 23. NVM reliability specifications (continued)
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
tnvmretd1k Data retention after up to 1 K cycles
20
100
—
years
nnvmcycd Cycling endurance
10 K
50 K
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
50
—
years
tnvmretee10 Data retention up to 10% of write endurance
20
100
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree32k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
175 K
1.6 M
6.4 M
50 M
400 M
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
where
Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
36
Freescale Semiconductor, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1061541001 | ADPT EMI-SHLD SIMPLEX SC-SC BEIG |
| P89LPC907FD,112 | IC 80C51 MCU FLASH 1K 8-SOIC |
| P89LPC906FD,112 | IC 80C51 MCU FLASH 1K 8-SOIC |
| P89LPC902FD,112 | IC 80C51 MCU FLASH 1K 8-SOIC |
| P89LPC901FD,112 | IC 80C51 MCU FLASH 1K 8-SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PK40X256VMD100 | 功能描述:ARM微控制器 - MCU KINETIS 256K USB LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| PK40X256VMD100 | 制造商:Freescale Semiconductor 功能描述:KINETIS 256KFLEX USB LCD |
| PK40X512VLQ100 | 制造商:Freescale Semiconductor 功能描述:KINETIS 512K FLEX USB - Bulk |
| PK4-10R-T | 制造商:Panduit Corp 功能描述:Ring Tongue Terminal 4AWG 47.2mm 14mm Tin 制造商:Panduit Corp 功能描述:RING TERMINAL, LARGE WIRE, KYNAR INSULAT - Bag |
| PK4-12R-T | 制造商:Panduit Corp 功能描述:RING TERMINAL, LARGE WIRE, KYN 制造商:Panduit Corp 功能描述:Ring Tongue Terminal 4AWG 51.3mm 21.8mm Tin 制造商:Panduit Corp 功能描述:RING TERMINAL, LARGE WIRE, KYNAR INSULAT - Bag |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。