參數(shù)資料
型號: PK30N512VLK100
廠商: Freescale Semiconductor
文件頁數(shù): 25/69頁
文件大小: 0K
描述: IC ARM CORTEX MCU 512K 80-LQFP
產品培訓模塊: Kinetis® Cortex-M4 Microcontroller Family
標準包裝: 1
系列: Kinetis
核心處理器: ARM? Cortex?-M4
芯體尺寸: 32-位
速度: 100MHz
連通性: CAN,I²C,IrDA,SDHC,SPI,UART/USART
外圍設備: DMA,I²S,LCD,LVD,POR,PWM,WDT
輸入/輸出數(shù): 56
程序存儲器容量: 512KB(512K x 8)
程序存儲器類型: 閃存
RAM 容量: 128K x 8
電壓 - 電源 (Vcc/Vdd): 1.71 V ~ 3.6 V
數(shù)據(jù)轉換器: A/D 27x16b,D/A 1x12b
振蕩器型: 內部
工作溫度: -40°C ~ 105°C
封裝/外殼: 80-LQFP
包裝: 托盤
6.3.3.2 32 kHz oscillator frequency specifications
Table 19. 32 kHz oscillator frequency specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
fosc_lo
Oscillator crystal
32.768
kHz
tstart
Crystal start-up time
1000
ms
fec_extal32 Externally provided input clock frequency
32.768
kHz
vec_extal32 Externally provided input clock amplitude
700
VBAT
mV
2, 3
1. Proper PC board layout procedures must be followed to achieve specifications.
2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The
oscillator remains enabled and XTAL32 must be left unconnected.
3. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the applied
clock must be within the range of VSS to VBAT.
6.4 Memories and memory interfaces
6.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 20. NVM program/erase timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thvpgm4
Longword Program high-voltage time
7.5
18
μs
thversscr
Sector Erase high-voltage time
13
113
ms
thversblk256k Erase Block high-voltage time for 256 KB
416
3616
ms
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1blk256k
Read 1s Block execution time
256 KB program/data flash
1.7
ms
trd1sec2k
Read 1s Section execution time (flash sector)
60
μs
Table continues on the next page...
Peripheral operating requirements and behaviors
K30 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
31
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PK30N512VLL100 功能描述:ARM微控制器 - MCU KINETIS 512K LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
PK30N512VLQ100 功能描述:ARM微控制器 - MCU KINETIS 512K LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
PK30N512VMC100 功能描述:ARM微控制器 - MCU KINETIS 512K LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
PK30N512VMD100 功能描述:ARM微控制器 - MCU Kinetis 512K LCD (pre-qual sample) RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
PK30N512VMD100 制造商:Freescale Semiconductor 功能描述:Kinetis 512K LCD