參數(shù)資料
型號： PK160FG80
廠商： Sanrex Corporation
英文描述： THYRISTOR/DIODE(ISOLATED TYPE)
中文描述： 晶閘管/二極管（隔離型）
文件頁數(shù)： 1/1頁
文件大小： 58K
代理商： PK160FG80
SanRex
THYRISTOR / DIODE (ISOLATED TYPE)
PK (PD)160FG40/80/120/160
I
T(AV)
=
160A
,
V
RRM
=
400 - 1600V
SanRex
Thyristor/Thyristor modules (
PK series
), Thyristor/
Diode modules (
PD series
) are designed for general purpose
high voltage applications such as motor controls, temperature
controls, lighting controls and UPS.
Features
* Glass-passivated junctions Features
* High Surge Current
* Low loss (V
TM
=1.5V)
Typical Applications
* Motor Controls
* Temperature Controls
* Lighting Controls
< Maximum Ratings >
(Tj = 25
°
C unless otherwise noted)
Ratings
PK160FG80
PK160FG120
800
1200
960
1300
800
1200
Symbol
Item
PK160FG40
400
480
400
T
C
= 84°C
T
C
= 84°C
1/2 cycle, 50Hz/60Hz, Peak value,
Non-repetitive
Value for one cycle surge current
PK160FG160
1600
1700
1600
160
251
Unit
V
RRM
V
RSM
V
DRM
I
T(AV)
I
T(RMS)
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
R.M.S. On-state Current
V
V
V
A
A
I
TSM
Surge On-state Current
5000/5400
A
I
2
t
P
GM
P
G(AV)
I
FGM
V
FG M
V
RG M
di/dt
V
ISO
Tj
T
s t g
I
2
t (for fusing)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
Isolation Breakdown Voltage
Operating Junction Temperature
Storage Temperature
Mounting M6
Mounting
Torque
Terminals M6
Mass
125000
10
3
3
10
5
200
2500
-40 to +125
-40 to +125
4.7
4.7
210
A
2
s
W
W
A
V
V
A/
F
s
I
G
=100mA, V
D
=1/2V
DRM,
dig/dt=0.1A/
F
s
A.C. 1 minute
°C
°C
N*m
Recommended Value 2.5 to 3.9
Recommended Value 2.5 to 3.9
Typical Value
g
< Electrical Characteristics >
(Tj = 25
°
C unless otherwise noted)
Ratings
Min.
Symbol
Item
Conditions
Typ.
Max.
35
35
1.5
100
3
Unit
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
G D
dv/dt
Rth(j-c)
Repetitive Peak Off-state Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-state Voltage
Thermal Resistance
T
j
= 125°C, V
D
= V
DRM
T
j
= 125°C, V
R
= V
RRM
I
T
= 480A
VD=6V, IT=1A
VD=6V, IT=1A
Tj = 125
°
C, V
D
=1/2V
DRM
Tj = 125
°
C, V
D
=2/3V
DRM
Junction to case
mA
mA
V
mA
V
V
V/
F
s
°C/W
0.25
500
0.18
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516) 625-1313 FAX(
516) 625-8845 E-mail: semi@sanrex.com
PK series
PD series
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