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參數(shù)資料
| 型號： | PJD882CT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 184K |
| 代理商： | PJD882CT |
PJD882/PJD882S
NPN Epitaxial Silicon Transistor
1-3
2002/01.rev.A
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
Complement to PJB772
PW
10ms,Duty Cycle
50%Pulse Test
PW
350
μ
s, Duty Cycle 2%
Characteristic
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Bias Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation
(Ta=25
℃
)
Collector Dissipation
(Ta=25
℃
)
Junction Temperature
Storage Temperature
Characteristics
Symbol
Test condition
Min
Typ
Min
Unit
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
(2) CLASSIFICATION
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
V
CB
=30V,I
E
=0
V
EB
=3V,I
C
=0
V
CE
=2V,I
C
=20mA
V
CE
=2V,I
C
=1A
I
C
=2A,I
B
=0.2A
I
C
=2A,I
B
=0.2A
V
CE
=5V,I
C
=0.1A
V
CB
=10V,I
E
=0
f=1MHz
30
60
150
160
0.3
1.0
90
45
1
1
400
0.5
2.0
μ
A
μ
A
V
V
MHz
pF
Classification
R
O
Y
G
h
FE
(2)
60-120
100-200
160-320
200-400
Rating
40
30
5
3
7
0.6
10
1
150
-55~150
Unit
V
V
V
A
A
A
W
W
℃
℃
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
Tj
Tstg
Device
PJD882CT
PJD882CK
Operating Temperature
-20
℃～
+85
℃
Package
TO-92
TO-126
TO-92 TO-126
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
℃
)
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
)
Pin : 1.Emitter
2.Collector
3.Base
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PJD882S | NPN Epitaxial Silicon Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PJD882S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Epitaxial Silicon Transistor |
| PJDD93018Z | 制造商:Panasonic Industrial Company 功能描述:DRUM |
| PJDD9301Z | 制造商:Panasonic Industrial Company 功能描述:DRUM |
| PJDD9304Z | 制造商:Panasonic Industrial Company 功能描述:DRUM |
| PJDF528Y | 制造商:Panasonic Industrial Company 功能描述:SLIDE SHAFT |
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