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參數(shù)資料
| 型號： | PJ13007CZ |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 154K |
| 代理商： | PJ13007CZ |
PJ13007
NPN Epitaxial Silicon Transistor
1-2
2002/01.rev.A
HIGH VOLTAGE SWITCH MODE APPLICATION
High Speed Switching
Suitable for Swiching Regulator and Motor Control
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
V
CEO
(
SUS
)
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
OB
f
T
t
on
ts
t
f
Ic = 10mA, I
B
= 0
V
EB
=9V, Ic=0
V
CE
=5V, Ic =2A
V
CE
=5V, Ic =5A
Ic =2A, I
B
=0.4A
Ic =5A, I
B
=1A
Ic =8A, I
B
=2A
Ic =2A, I
B
=0.4A
Ic =5A, I
B
=1A
V
CB
=10V, f =0.1MHz
V
CE
=10V, Ic =0.5A
V
CC
=125V, Ic =5A
I
B1
=I
B2
=1A
400
8
5
4
V
mA
V
V
V
V
V
pF
MHz
μ
S
μ
S
μ
S
1
60
30
1
2
3
1.2
1.6
1.6
3
0.7
110
Pulse Test: PW
≤
300
μ
S, Duty Cycle
≤
2 %
Characteristic
Collector Base Voltage
Collector Emitter
Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current
(Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
Rating
700
400
Uint
V
V
V
EBO
Ic
Ic
9
8
16
V
A
A
I
B
Pc
Tj
Tstg
4
80
150
-65 ~150
A
W
℃
℃
Device
Operating Temperature
Package
PJ13007CZ
-20
℃～
+85
℃
TO-220
TO-220
ABSOLUTE MAXIMUM RATINGS
(Ta= 25
℃
)
ELECTRICAL CHARACTERISTICS
(Ta= 25
℃
)
ORDERING INFORMATION
Pin : 1. Base
2. Collector
3. Emitter
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