參數(shù)資料
型號(hào): PIC16LC712T
廠商: Microchip Technology Inc.
英文描述: 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM
中文描述: 8位CMOS微控制器與A / D轉(zhuǎn)換器和捕捉/比較/ PWM
文件頁(yè)數(shù): 77/108頁(yè)
文件大小: 1810K
代理商: PIC16LC712T
PIC16C712/716
1999 Microchip Technology Inc.
Preliminary
DS41106A-page 77
12.1
DC Characteristics:
PIC16C712/716-04 (Commercial, Industrial, Extended)
PIC16C712/716-20 (Commercial, Industrial, Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
-40°C
0°C
T
A
+70°C
+85°C
+125°C
for commercial
for industrial
for extended
T
A
T
A
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
D001
D001A
V
DD
Supply Voltage
4.0
V
BOR
*
-
-
5.5
5.5
V
V
BOR enabled (Note 7)
D002*
V
DR
RAM Data Retention Voltage
(1)
-
1.5
-
V
D003
V
POR
V
DD
Start Voltage
to ensure inter-
nal Power-on Reset signal
-
V
SS
-
V
See section on Power-on Reset for details
D004*
D004A*
S
VDD
V
DD
Rise Rate
to ensure internal
Power-on Reset signal
0.05
TBD
-
-
-
-
V/ms
PWRT enabled (PWRTE bit clear)
PWRT disabled (PWRTE bit set)
See section on Power-on Reset for details
D005
V
BOR
Brown-out Reset
voltage trip point
3.65
-
4.35
V
BODEN bit set
D010
D013
I
DD
Supply Current
(2,5)
-
-
0.8
4.0
2.5
8.0
mA
mA
F
OSC
= 4 MHz, V
DD
= 4.0V
F
OSC
= 20 MHz, V
DD
= 4.0V
D020
D021
D021B
I
PD
Power-down Current
(3,5)
-
-
-
-
10.5
1.5
1.5
2.5
42
16
19
19
μ
A
μ
A
μ
A
μ
A
V
DD
= 4.0V, WDT enabled,-40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled, 0
°
C to +70
°
C
V
DD
= 4.0V, WDT disabled,-40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled,-40
°
C to +125
°
C
D022*
D022A*
I
WDT
I
BOR
Module Differential Current
(6)
Watchdog Timer
Brown-out Reset
-
-
6.0
TBD
20
200
μ
A
μ
A
WDTE bit set, V
DD
= 4.0V
BODEN bit set, V
DD
= 5.0V
1A
F
OSC
LP Oscillator Operating Frequency
RC Oscillator Operating Frequency
XT Oscillator Operating Frequency
HS Oscillator Operating Frequency
0
0
0
0
200
4
4
20
KHz
MHz
MHz
MHz
All temperatures
All temperatures
All temperatures
All temperatures
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not
tested.
This is the limit to which V
DD
can be lowered without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
,
MCLR = V
DD
; WDT enabled/disabled as specified.
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with the
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
For RC osc mode, current through Rext is not included. The current through the resistor can be estimated by the formula Ir =
V
DD
/2Rext (mA) with Rext in kOhm.
Timer1 oscillator (when enabled) adds approximately 20
μ
A to the specification. This value is from characterization and is for
design guidance only. This is not tested.
The
current is the additional current consumed when this peripheral is enabled. This current should be added to the base
I
DD
or I
PD
measurement.
This is the voltage where the device enters the Brown-out Reset. When BOR is enabled, the device will operate correctly to
this trip point.
Note1:
2:
3:
4:
5:
6:
7:
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