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    • 參數(shù)資料
      型號: PIC16F874-04I/P
      廠商: Microchip Technology
      文件頁數(shù): 157/218頁
      文件大?。?/td> 0K
      描述: IC MCU FLASH 4KX14 EE 40DIP
      產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
      8-bit PIC® Microcontroller Portfolio
      標(biāo)準(zhǔn)包裝: 10
      系列: PIC® 16F
      核心處理器: PIC
      芯體尺寸: 8-位
      速度: 4MHz
      連通性: I²C,SPI,UART/USART
      外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
      輸入/輸出數(shù): 33
      程序存儲器容量: 7KB(4K x 14)
      程序存儲器類型: 閃存
      EEPROM 大?。?/td> 128 x 8
      RAM 容量: 192 x 8
      電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
      數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
      振蕩器型: 外部
      工作溫度: -40°C ~ 85°C
      封裝/外殼: 40-DIP(0.600",15.24mm)
      包裝: 管件
      配用: 444-1001-ND - DEMO BOARD FOR PICMICRO MCU
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      2001 Microchip Technology Inc.
      DS30292C-page 41
      PIC16F87X
      4.0
      DATA EEPROM AND FLASH
      PROGRAM MEMORY
      The Data EEPROM and FLASH Program Memory are
      readable and writable during normal operation over the
      entire VDD range. These operations take place on a sin-
      gle byte for Data EEPROM memory and a single word
      for Program memory. A write operation causes an
      erase-then-write operation to take place on the speci-
      fied byte or word. A bulk erase operation may not be
      issued from user code (which includes removing code
      protection).
      Access to program memory allows for checksum calcu-
      lation. The values written to program memory do not
      need to be valid instructions. Therefore, up to 14-bit
      numbers can be stored in memory for use as calibra-
      tion parameters, serial numbers, packed 7-bit ASCII,
      etc. Executing a program memory location containing
      data that form an invalid instruction, results in the exe-
      cution of a NOP instruction.
      The EEPROM Data memory is rated for high erase/
      write cycles (specification D120). The FLASH program
      memory is rated much lower (specification D130),
      because EEPROM data memory can be used to store
      frequently updated values. An on-chip timer controls
      the write time and it will vary with voltage and tempera-
      ture, as well as from chip to chip. Please refer to the
      specifications for exact limits (specifications D122 and
      D133).
      A byte or word write automatically erases the location
      and writes the new value (erase before write). Writing
      to EEPROM data memory does not impact the opera-
      tion of the device. Writing to program memory will
      cease the execution of instructions until the write is
      complete. The program memory cannot be accessed
      during the write. During the write operation, the oscilla-
      tor continues to run, the peripherals continue to func-
      tion and interrupt events will be detected and
      essentially “queued” until the write is complete. When
      the write completes, the next instruction in the pipeline
      is executed and the branch to the interrupt vector will
      take place, if the interrupt is enabled and occurred dur-
      ing the write.
      Read and write access to both memories take place
      indirectly through a set of Special Function Registers
      (SFR). The six SFRs used are:
      EEDATA
      EEDATH
      EEADR
      EEADRH
      EECON1
      EECON2
      The EEPROM data memory allows byte read and write
      operations without interfering with the normal operation
      of the microcontroller. When interfacing to EEPROM
      data memory, the EEADR register holds the address to
      be accessed. Depending on the operation, the EEDATA
      register holds the data to be written, or the data read, at
      the address in EEADR. The PIC16F873/874 devices
      have 128 bytes of EEPROM data memory and there-
      fore, require that the MSb of EEADR remain clear. The
      EEPROM data memory on these devices do not wrap
      around to 0, i.e., 0x80 in the EEADR does not map to
      0x00. The PIC16F876/877 devices have 256 bytes of
      EEPROM data memory and therefore, uses all 8-bits of
      the EEADR.
      The FLASH program memory allows non-intrusive
      read access, but write operations cause the device to
      stop executing instructions, until the write completes.
      When
      interfacing
      to
      the
      program
      memory,
      the
      EEADRH:EEADR registers form a two-byte word,
      which holds the 13-bit address of the memory location
      being
      accessed.
      The
      register
      combination
      of
      EEDATH:EEDATA holds the 14-bit data for writes, or
      reflects the value of program memory after a read oper-
      ation. Just as in EEPROM data memory accesses, the
      value of the EEADRH:EEADR registers must be within
      the valid range of program memory, depending on the
      device: 0000h to 1FFFh for the PIC16F873/874, or
      0000h to 3FFFh for the PIC16F876/877. Addresses
      outside of this range do not wrap around to 0000h (i.e.,
      4000h does not map to 0000h on the PIC16F877).
      4.1
      EECON1 and EECON2 Registers
      The EECON1 register is the control register for config-
      uring and initiating the access. The EECON2 register is
      not a physically implemented register, but is used
      exclusively in the memory write sequence to prevent
      inadvertent writes.
      There are many bits used to control the read and write
      operations to EEPROM data and FLASH program
      memory. The EEPGD bit determines if the access will
      be a program or data memory access. When clear, any
      subsequent operations will work on the EEPROM data
      memory. When set, all subsequent operations will
      operate in the program memory.
      Read operations only use one additional bit, RD, which
      initiates the read operation from the desired memory
      location. Once this bit is set, the value of the desired
      memory location will be available in the data registers.
      This bit cannot be cleared by firmware. It is automati-
      cally cleared at the end of the read operation. For
      EEPROM data memory reads, the data will be avail-
      able in the EEDATA register in the very next instruction
      cycle after the RD bit is set. For program memory
      reads,
      the
      data
      will
      be
      loaded
      into
      the
      EEDATH:EEDATA registers, following the second
      instruction after the RD bit is set.
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      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
      PIC16F874-10E/L 功能描述:8位微控制器 -MCU 7KB 192 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
      PIC16F874-10E/P 功能描述:8位微控制器 -MCU 7KB 192 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
      PIC16F874-10E/PQ 功能描述:8位微控制器 -MCU 7KB 192 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
      PIC16F874-10E/PT 功能描述:8位微控制器 -MCU 7KB 192 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
      PIC16F874-20/L 功能描述:8位微控制器 -MCU 7KB 192 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT